Rapid thermal oxidation (RTO) technology, with its second-level response and atomic-level precision, has become a key process in high-end chip manufacturing.

HTOL (High Temperature Operating Life Test) and Burn-in are closely related in semiconductor reliability testing.

The HTRB (High Temperature Reverse Bias) reliability test is an accelerated life test that accelerates the aging of device terminals through dual stress of temperature and electrical stress, thereby activating defects present in the design or manufacturing process of power semiconductor devices.

HBF combines the characteristics of 3D NAND flash memory and High-Bandwidth Memory (HBM) to better meet the needs of AI inference.

The temperature of the optical module is a crucial indicator, as it can adversely affect the performance and lifespan of the optical module.

As chips become increasingly complex and integration density rises, precise alignment of molds in FOWLP (Fan-Out Wafer-Level Packaging) or FOPLP (Fan-Out Package-on-Package) processes becomes crucial.

The accelerated aging test for optoelectronic devices and modules is a crucial method to evaluate their long-term reliability and lifespan by simulating extreme environmental conditions to induce potential defects in a short period of time.

Thermal compression bonding requires precise connection between materials (such as chips and substrates, metal bumps, etc.) under high temperature and pressure. Its success is highly dependent on temperature uniformity and control accuracy.